| PART |
Description |
Maker |
| BBY51 Q62702-B631 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY51-03W BBY5103W Q62702-B663 |
ER 9C 6#16 3#12 PIN RECP BOX
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-B0862 BBY5302W BBY53-02W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管（Hyperabrupt交界调谐二极管频率线性调谐范 12五）
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY26-S1 BBY24 Q62702-B23-S2 BBY24-BBY27 BBY24-S1 |
Silicon Tuning Varactors (Abrupt junction tuning diode Tuning range 120 V) 硅调谐变容二极管（突变结调谐二极管调谐范20伏）
1 UF 10% 25V X7R (1206) CHIP CAP TR
RESISTOR, 1% SMT 0603
From old datasheet system
|
SIEMENS A G
Siemens Group
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-B916 BBY58-02W BBY5802W |
From old datasheet system
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
Siemens Group
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| MMVL2101NBSP MMVL2101T1 MMVL2101 MMVL2101T1-D |
Silicon Tuning Diode
Silicon Tuning Diode 6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ONSEMI[ON Semiconductor]
|
| MMVL809T1 MMVL809T1G |
UHF BAND, 5.3 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE PLASTIC, CASE 477-02, 2 PIN
Silicon Tuning Diode
|
ONSEMI[ON Semiconductor]
|
| KDV262E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING)
|
KEC(Korea Electronics)
|
